Thermal Annealing Effects in the Strained (Ga, In) as Layer

Abstract

ABSTRACTWe have studied the ternary (Ga, In)As layers in GaInAs/GaAs heterostructure systems after conventional furnace annealing or rapid thermal annealing (RTA). Measurement was done by the double crystal X-ray rocking curve technique (XRC) and the Auger Electron Spectroscopy technique (AES). X-ray rocking curves show an asymmetric shoulder in the GaInAs epilayer peak indicating a smaller lattice spacing near the surface. Epilayer peaks of encapsulated samples also show an asymmetric shoulder which is perhaps due to the tensile stress in the epilayer caused by the encapsulant film. AES depth profiles for 600°C, 15 minutes proximity annealed sample show that the concentrations of Ga, In, and As are not uniform over about 60 nm depth, showing a Garich and In, As-deficient surface. For 700°C, 20 seconds a RTA treated sample shows no such non-uniformity.