Thermal and Surface Evaluation on The Process of Forming a Cu2O/CuO Semiconductor Photocatalyst on a Thin Copper Plate

Abstract

This research aims to investigate the process of forming a multi-scale copper oxide semiconductor (CuO/Cu2O) through a process of calcining a copper plate. The changes that occur during the formation of the oxide are thermally and surface evaluated. Evaluation using Differential Thermal Analysis (DTA) obtained by surface change of copper plate happened at temperature 380°C. Calcination of oxide formation was carried out at temperature 380°C for 1 hour. Surface evaluation process by using Scanning Electron Microscope (SEM) surface and cross-section, to determine diffusion of oxide formation on copper plate. The material composition is monitored by XRF and XRD to explain the process of structural and physical changes of the copper oxide plate formed during the heating process. The thickness of Cu plates used is 200-250 μm. SEM analysis results, the oxygen atom interruption region is in the range of 20-30 μm, and diffuses deeper during thermal oxidation process. The maximum diffusion depth of oxygen atoms reaches 129 μm.