Abstract
The first stages of the interaction between InP substrates and gases used in chemical vapor deposition processes (NH 3 , SiH 4 and O 2 ) with and without the assistance of uv illumination have been studied for the first time in an uhv environment by surface techniques. Photo-assisted NH 3 exposures lead to a nitrogen uptake in opposition to thermally-assisted exposures. Photo or thermally-assisted SiH 4 exposures partly remove the native oxide and drive silicon atoms to form covalent bonds to InP. Successive exposures to SiH 4 and O 2 build the first silica layers.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
