Abstract
InxAl1-xN is a promising semiconducting material due to its wide range of potential applications in optoelectronics, bio sensing and in thermoelectric power generation. It has a tunable band gap (6 to 0.7eV), high electron saturation velocity, mobility (290 cm2/Vs) and non-toxic nature. Due to this, the material’s electrical and thermal properties require further study in detail to explore more potential applications. In this work, we have investigated theoretically the thermal and electrical properties of InxAl1-xN alloy to predict thermoelectric (TE) figure of merit and performance to identify the most promising composition and carrier densities for optimum power generation at room temperature and above.
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