Abstract
Temperature distributions in SOI transistor devices with trench isolations in LSI chips were calculated using three-dimensional computer simulations. The relations between the maximum temperature increase in transistor devices and the geometric parameters (width and length of aluminum lines on the transistor devices, size of SOI regions, and spacing of two SOI devices) were calculated. We also calculated the effect of placing a heat dissipation layer on the SOI devices. Temperature increases in SOI devices were measured by placing a thermal sensor diode in the SOI region. The calculation results and experimental results agreed well. The calculation results can be used for optimal thermal design of SOI devices in LSI chips.
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