Abstract
Low temperature solution combustion synthesis emerges as a facile method for the synthesis of functional metal oxides thin films for electronic applications. We study the solution combustion synthesis process of Cu:NiOx using different molar ratios (w/o, 0.1 and 1.5) of fuel acetylacetone (Acac) to oxidizer (Cu, Ni Nitrates) as a function of thermal annealing temperatures 150, 200, and 300 °C. The solution combustion synthesis process, in both thin films and bulk Cu:NiOx, is investigated. Thermal analysis studies using TGA and DTA reveal that the Cu:NiOx thin films show a more gradual mass loss while the bulk Cu:NiOx exhibits a distinct combustion process. The thin films can crystallize to Cu:NiOx at an annealing temperature of 300 °C, irrespective of the Acac/Oxidizer ratio, whereas lower annealing temperatures (150 and 200 °C) produce amorphous materials. A detail characterization study of solution combustion synthesized Cu:NiOx, including XPS, UV-Vis, AFM, and Contact angle measurements, is presented. Finally, 50 nm Cu:NiOx thin films are introduced as HTLs within the inverted perovskite solar cell device architecture. The Cu:NiOx HTL annealed at 150 and 200 °C provided PVSCs with limited functionality, whereas efficient triple-cation Cs0.04(MA0.17FA0.83)0.96 Pb(I0.83Br0.17)3-based PVSCs achieved for Cu:NiOx HTLs for annealing temperature of 300 °C.
Highlights
Perovskite solar cells (PVSCs) have witnessed significant progress related to power conversion efficiency within the last decade, climbing from 3.8% in 2009 to more than 24%in the year 2021 for single junction cells [1,2]
The synthesis behavior of the Cu:NiOx thin films and corresponding bulk mixtures examined through thermogravimetric analysis (TGA)
2a,bthepresents and the differential sis (DTA) curves of the 50 nm thick Cu:NiOx films prepared with a different molar ratio of fuel (Acac) to oxidizer (Cu and Ni nitrates), namely without (w/o) Acac, 0.1 and 1.5, and drying the films at 80 ◦ C
Summary
Perovskite solar cells (PVSCs) have witnessed significant progress related to power conversion efficiency within the last decade, climbing from 3.8% in 2009 to more than 24%. In the year 2021 for single junction cells [1,2]. Some of the most promising hole transporting layers (HTLs) for inverted PVSCs are thin films of pristine or doped NiOx materials grown with various deposition methods. Thanks to its p-type semiconducting nature, high optical transmittance, enhanced electrical conductivity, and deep-lying valence band (VB) that matches well with the VB of hybrid perovskite photoactive layer, NiOx emerges as an excellent hole transporting layer (HTL) material for inverted perovskite solar cells [3–16]. Doping of NiOx with Copper (Cu) has been shown to improve the conductivity and charge collection properties, resulting in higher PCE-inverted perovskite solar cells. Kim studied the performance of PEDOT:PSS, NiOx , and 5% Cu doped NiOx (Cu:NiOx ) HTLs
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