Abstract
Diamondlike carbon (DLC) membrane masks for high-throughput projection electron-beam lithography have an important advantage over stencil masks: a single mask can be used to print donut-shaped patterns. At a membrane thickness on the order of a few tens of nanometers, thermal problems could occur. The temperature rise of a membrane mask was simulated with various exposure parameters. Membrane and scatterer thickness, resist sensitivity, and pattern coverage were varied. It was found that global temperature rise after exposure of a chip is on the order of 0.005 °C, while temperature rise in a membrane area under exposure reaches 2.54 °C. Simulation results were compared to those on a silicon stencil mask. It was found that the global heating is less on a DLC membrane mask.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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