Abstract
Photoluminescence spectra of ${\mathrm{Zn}}_{\mathit{x}}$${\mathrm{Hg}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$Te semiconductor alloys (and of other II--VI alloys) show that the line due to excitons localized by composition disorder shifts to higher photon energy with increasing temperature. This blueshift is attributed to the thermal activation of localized excitons within the density-of-states tail. By incorporating this process into a theoretical model previously developed for the low-temperature situation, a good agreement with the experiments is obtained.
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