Abstract
A Monolithic Active Pixel Sensor (MAPS) is currently being designed in a new 130 nm high-resistivity (>1 kΩ·cm) CMOS process for full image beam monitoring in the carbon-ion therapeutic facility. The charge sensing node collects the charge deposited by the carbon ions that pass through the MAPS. A 3-dimensional TCAD model of the pixel has been established to study the carbon-ion induced process in the MAPS. This paper will discuss the thickness of the depletion layer, the charge collection efficiency, the charge collection time, and the characteristics of NMOS devices with different bias voltages and carbon-ion hitting locations.
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