Abstract
The Monolithic Active Pixel Sensor (MAPS) is a good candidate for the inner tracking system of the Electron–Ion Collider in China (EicC). Hence, a MAPS with a pixel pitch of ∼30 µm is being designed. Two 130 nm CMOS processes have been proposed as candidates for this MAPS design. The first one is a commercial standard twin-well low-resistivity (<50 Ω cm−3) process, and the other one is a quadruple-well high-resistivity (>1 kΩ cm−3) process. A 3-dimensional TCAD model of the pixels has been established to evaluate the Minimum Ionizing Particles (MIPs) induced charge collection in these two processes. This paper will discuss the study of charge collection efficiency, charge collection time, and charge sharing among pixels.
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