Abstract
The scattering of phonons in lightly doped, partly compensated semiconductors at low temperatures is studied. The scattering is due to absorption and emission of phonons by donor pairs. The electron-phonon interaction is treated in a deformation potential formalism. A general expression for the ultrasonic attenuation coefficient is derived, which has the form of a four-fold integral over the positions of both donors. The dependence of the coefficient on the polarization and direction of propagation of the ultrasonic wave is discussed. In general, the attenuation of transverse waves in the hopping process is appreciably weaker than that of the longitudinal ultrasound.
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