Abstract
Two categories of transient currents in totally depleted homogeniously doped semiconductors are treated mathematically. In the first category the transient current is completely space-charge limited while the current pulses in the second category arise from an injected charge reservoir where all of the injected charges immediately are under the influence of the electric field. Neglecting diffusion and trapping it is possible to obtain exact analytical solutions for the transients up to the transit time of the leading carriers. In the first category these transit times are obtained by numerical methods and presented graphically as a function of the ratio between the applied voltage and the depletion voltage of the semiconductor. In the second category implicit expressions are obtained from which the transit times can be calculated. For the completely space-charge limited case the analysis is carried on up to the transit time of the last carriers that start their travel at t = 0. In this part of the analysis the results are obtained numerically. Both majority carrier and minority carrier transients are considered.
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