Abstract
The recently observed, current controlled, negative resistance behaviour in a novel bulk GaAs structure is analysed using the basic charge neutrality and carrier transport equations. The structure is composed of a triangular barrier (TB) diode (formed by creating a plane of ionised impurities in the Crystal bulk using MBE) in the immediate vicinity of a p–n junction in the same crystal. The switching phenomena in this ‘TB switch’ is attributed to a regenerative feedback interaction between the p–n junction and the TB diode. Simple closed-form expressions for the main device parameters are derived.
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