Abstract
Unlike the electron-impurity interation, the electron-accoustic phonon interaction generates a temperature-dependent cyclotron resonance lineshape. The difference is due to the temperature-dependent phonon distribution and the quasi-inelastic nature of the electron phonon scattering. Calculations based on the proper connected diagram expansion are in qualitative agreement with experiments on inversion-layer electrons in Si in the temperature range 8–65 K.
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