Abstract
The theory of the surface depletion region for a semiconductor with a linearly graded impurity profile is described in this paper. Using the depletion approximation, expressions for the electric field, potential and surface potential are derived as functions of the profile parameters. The theoretical high frequency CV characteristics of an MOS structure built on such a surface are generated and compared with the experimental results obtained on MOS capacitors fabricated on implanted surfaces. The agreement between the theory and experimental results is very good. Since many diffused and implanted profiles can be approximated by piecewise-linear segments, the theory presented here can be extended and used in the modelling and simulation of a variety of ion-implanted MOS structures.
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