Abstract

Calculations of electronic and optical properties of solids at finite temperature including electron-phonon interactions and quantum zero-point renormalization have enjoyed considerable progress during the past few years. Among the emerging methodologies in this area, we recently proposed a new approach to compute optical spectra at finite temperature including phonon-assisted quantum processes via a single supercell calculation [Zacharias and Giustino, Phys. Rev. B 94, 075125 (2016)]. In the present work we considerably expand the scope of our previous theory starting from a compact reciprocal space formulation, and we demonstrate that this improved approach provides accurate temperature-dependent band structures in three-dimensional and two-dimensional materials, using a special set of atomic displacements in a single supercell calculation. We also demonstrate that our special displacement reproduces the thermal ellipsoids obtained from X-ray crystallography, and yields accurate thermal averages of the mean-square atomic displacements. At a more fundamental level, we show that the special displacement represents an exact single-point approximant of an imaginary-time Feynman's path integral for the lattice dynamics. This enhanced version of the special displacement method enables non-perturbative, robust, and straightforward ab initio calculations of the electronic and optical properties of solids at finite temperature, and can easily be used as a post-processing step to any electronic structure code. Given its simplicity and numerical stability, the present development is suited for high-throughput calculations of band structures, quasiparticle corrections, optical spectra, and transport coefficients at finite temperature.

Highlights

  • The calculation of the electronic and optical properties of materials at finite temperature is a long-standing challenge for ab initio electronic structure methods

  • The core of the special displacement method described in this paper is to identify one set of atomic displacements so that a single evaluation of

  • The agreement between our calculation and experiment is very good, except that we underestimate slightly the temperature slope. This effect is a well-known consequence of the fact that the strength of the electron-phonon interaction is underestimated by density functional theory (DFT)/local density approximation (LDA); the slope can be improved by using GW calculations in combination with the special displacement method (SDM), as demonstrated in Ref. [23]

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Summary

INTRODUCTION

The calculation of the electronic and optical properties of materials at finite temperature is a long-standing challenge for ab initio electronic structure methods. The matrix elements are employed to obtain temperature-dependent band structures in the Allen-Heine (AH) method [31,32], and to compute indirect optical absorption in the Hall, Bardeen, and Blatt theory [33,34] These approaches have enjoyed considerable success during the past decade across a broad range of materials [3,4,5,7,8,9,10,11,12,13,14,24,35,36,37,38]. Phonon wave vectors that coincide with their time-reversal partners are grouped in a finite set A, and their contribution to the atomic displacements vanishes in the limit of dense Brillouin-zone sampling.

General remarks
Reciprocal space formulation
ZG DISPLACEMENT AND THERMAL ELLIPSOIDS
THE ZG DISPLACEMENT
The simplest case
Thermal average of an observable in the Williams-Lax formalism
Linear variations
Quadratic variations
Choice of normal coordinates for the ZG displacement
Additional considerations for calculations using small supercells
Computational setup
Generation of the ZG displacement
Smooth gauge of phonon eigenmodes along a path in reciprocal space
SUMMARY OF PROCEDURE AND NUMERICAL RESULTS
Temperature-dependent band structure of Si
Temperature-dependent band structure of GaAs
Temperature-dependent band structure of monolayer MoS2
General remarks on the SDM results
Findings
CONCLUSIONS AND OUTLOOK
Full Text
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