Theory of the input power-dependence of the electron heating in n-inversion layers

Abstract

The average energy loss P of hot electrons due to the interaction with acoustic bulk phonons is calculated and used to determine the electron heating temperature Δ as a function of the input power eμ E 2. It is found that P creases proportional to Δ 2 and is independent of the carrier concentration. Consequently the ratio Δ/√ eμ E 2 turns out to be a constant (0.75 × 10 −2 K/(eV/s) 1 2 for n-Si and 2.04 × 10 −2 K/(eV/s) 1 2 for n-GaAs) in agreement with the experimental data deduced from FIR-emission experiments at T = 4.2 K.