Abstract
Theoretical calculations have been performed of the electrical resistivity, magnetoresistivity, Hall effect, and thermoelectric power of graphite single crystals, as functions of the temperature and impurity content. The calculations are based upon the three-dimensional model of the electronic band structure and upon a simple scattering law. The scattering law, which may be justified by the deformation-potential theory, is that the scattering rate is proportional to the density of electronic states multiplied by the phonon density. The integrals which appear in the calculation were performed numerically, using an electronic computer. The results for the electrical resistivity of pure graphite agree with experiment to better than 5% for all temperatures between 50°K and 700°K (the highest temperature of measurement for a single crystal). The magnetoresistivity results agree with experiment to within 30% from 50°K to 300°K, which is a considerable improvement over the simple two-band theory. The Hall effect and thermoelectric power results are in rough agreement with experiment (about 50% error). However, the latter quantities are more sensitive to the details of the band structure and scattering law. Calculations for various values of the parameters entering into the band structure and scattering law are being performed, and it is expected that agreement with experiment will be improved.
Published Version
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