Abstract
The four layer structure M-I (leaky)- n- p semiconductor displays a current-controlled negative-resistance in its I-V characteristic. The device is named “MISS” which is an acronym for Metal-Insulator-Silicon-Switch. The punch-through mode of operation of the device was treated in an earlier paper (part I). The avalanche-mode of the operation of the device is now considered. In addition to the basic positive feedback action associated with the punch-through MISS, a second positive feedback action is found to exist in the avalanche-mode MISS, which parallels that responsible for switching in an avalanche transistor. The coexistence of these two regenerative feedback actions can, under favourable conditions, result in three stable states in the I-V characteristic of the MISS. A device incorporating this behaviour can be of importance in multi-level logic circuits.
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