Abstract
Scanning tunneling microscopy (STM) images of charge density waves (CDW) in transition-metal dichalcogenides 2H-NbSe 2 and 1T-TaS 2 are theoretically simulated. The results of first-principles band calculations are applied to the mean-field approximation model for commensurate CDW in order to determine the electronic structure. The STM/STS spectrum is numerically simulated through the surface local density of states (LDOS) and the influence by the strength of the effective potential or the bias voltages is investigated. The obtained results suggest a sensitive bias voltage dependence of the STS spectrum of the CDW.
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