Abstract
A model for a metal–oxide–semiconductor field-effect-transistor (MOSFET) with a surrounding gate (SG) is developed. Analytical solutions to the model are obtained by solving Poisson's equation using series expansion. Taking short-channel effects into account, the analytical expressions for electric potential, electric field, and threshold voltage are obtained. It is found that the transistor is fully depleted for a small radius, and the threshold voltage increases as the radius increases or as the oxide capacitance per unit area decreases.
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