Abstract
The paper presents a transient analysis of the Electron Beam Induced Current in a semiconductor diode structure, when the electron beam in a SEM is cut off. A thin layer (the thickness of the layer is comparable to or less than the minority carrier diffusion length) with a p- n junction parallel to the surface has been considered. The influence of the layer thickness on current vs time characteristics has been shown. Calculations for any value of surface recombination velocity have been made.
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