Abstract
Abstract The current status of investigations for the rival effect of disorder and electron-electron interaction in the intermediate-concentration regime of doped semiconductors is reviewed from the standpoint of transfer-diagonal formulation. In particular, effects of electron-electron interaction on the electronic specific heat and magnetic properties at low temperatures are clarified, and theoretical results are compared with the experimental ones on phosphorusdoped silicon. The formulation to stimulate the Anderson-localized states in the intermediate concentration regime of doped semiconductors by a cluster model is presented, and the results of the computer simulation are discussed in detail.
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