Abstract
Abstract The current status of theoretical investigations for the interplay between disorder and electron-electron interaction in the Anderson-localized regime of doped semiconductors is reviewed. The description starts from the intrastate interaction theory. Then the effects of the spin-dependent interstate interactions are described. In particular, the roles of electron-electron interaction on specific heat and magnetic properties at low temperatures are clarified, and theoretical results are compared with the experimental ones on phosphorus-doped silicon (Si:P). The validity of the theoretical formulation developed by the present author's group is discussed through computer studies of interacting donor electrons in the intermediate concentration region of doped semiconductors. Finally the effects of electron–electron interaction on transport properties and polarizability in the presence of magnetic fields are discussed, and theoretical results are compared with observed magnetoresistance and magnetocap...
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