Abstract
Magnetic field dependent correlation functions for antiferromagnets near the spin flop-paramagnetic phase boundary have been calculated using an RPA technique. The exponents describing the field dependence of the magnetization, the staggered magnetization and the correlation length, which are obtained from these calculations, are compared to those obtained using renormalization groups results. Here, we use our recent results relating the symmetry forbidden one-phonon Raman scattering in magnetic semiconductors to the two-spin correlation function, to calculate the field dependence of the Raman integrated intensity in EuTe. Light scattering experiments are suggested where the exponents related to the spin flop-paramagnetic phase boundary, Hc(T), and the field dependence of the staggered magnetization can be measured from the one phonon–one spin Raman spectrum in EuTe.
Published Version
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