Abstract
The random-phase approximation is generalized to include the effects of band anisotropy, coupling between degenerate valence bands, coupling to optical phonons, and the Hubbard exchange correction. This method is used to calculate the ground-state energy and equilibrium density of the electron-hole liquid in Ge, Si, AgBr, and various II-VI and III-V compounds and the thallous halides and lead chalcogenides. The results are compared to the experiments where they are available. Agreement is excellent for Ge and Si and reasonable for the other materials, considering the large uncertainties in the values of the band masses, etc. Substantial discrepancies remain between theory and experiment, however, in the cases of GaAs and ZnO.
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