Abstract
Within the approximation of effective mass and rectangular potential barriers for the electron and using the obtained solutions of complete Schrodinger equation, the theory of dynamic conductivity for three-barrier resonant tunneling structure (InGaAs/InAlAs) with different depths of potential wells driven by weak electromagnetic field is developed in one- and two-photon approach. 
 It is shown that varying Ga concentration one can obtain such geometric configurations of nanostructure, being an active region of quantum cascade laser, in which the increasing intensity of laser radiation, produced by electron quantum transitions accompanied by radiation of two photons with equal energy, is observed. It is established that the contribution of two-photon transitions into the complete magnitude of dynamic conductivity is not smaller than 37 %.
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