Theory of direct creation of quantum-well excitons by hole-assisted electron resonant tunneling.

Abstract

We have investigated a resonant tunneling process: the direct creation of GaAs quantum-well excitons through hole-assisted electron resonant tunneling. The current density of this tunneling process is on the same order of magnitude as the usual electron resonant tunneling current density. However, the two-particle nature of such a tunneling process makes it different from the conventional one-particle (electron, hole, or exciton) tunneling process, and in fact it is another type of assisted tunneling as compared with the phonon-assisted tunneling. This tunneling process may open a door toward electrically pumped excitonic cavity quantum electrodynamics and optoelectronic devices.