Abstract
We have demonstrated a new tunneling process: the direct creation of GaAs quantum well excitons through electron resonant tunneling. The two-particle nature of such a tunneling process makes it different from the ordinary one-particle (electron, hole, or exciton) tunneling process in resonant tunneling conditions and results in different $I$- $V$ characteristics. This resonant tunneling process may open a door toward electrically pumped excitonic cavity quantum electrodynamics and optoelectronic devices.
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