Theory of cyclotron resonance for electrons in a Si surface inversion layer under a uniaxial stress

Abstract

The theory of cyclotron resonance for two types of carriers under a uniaxial stress is studied by using the method of kinetic equations. The intervalley electron-electron relaxation rate ${\ensuremath{\tau}}_{e}^{\ensuremath{-}1}(\ensuremath{\omega})$ is obtained by using the memory-function approach at finite temperatures. The contributions from both the imaginary and real parts of ${\ensuremath{\tau}}_{e}^{\ensuremath{-}1}(\ensuremath{\omega})$ to the cyclotron-resonance line shape are considered. The cyclotron-resonance mass as a function of temperature has been obtained. The agreement between our results and experimental measurements seems to be satisfactory.