Abstract
An analytical model is presented for the current flowing in a Schottky diode or shallow p-n junction when the current is generated by an electron beam or light beam. The model represents an exact solution to the three-dimensional diffusion equation when the current-collecting junction is at right angles to a grain boundary or to the semiconductor surface. The finite size of the electron-hole generation region is readily included in the analysis. The results are given in terms of one-dimensional integrals which can simply and accurately be evaluated using a programmable hand calculator. The theory provides a basis for using electron-beam-induced currents or light-beam-induced currents to measure the minority-carrier diffusion length and surface recombination velocity at a grain boundary or surface.
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