Abstract
A method is presented for determining the minority-carrier diffusion length and surface recombination velocity in passivated, shallow junction semiconductor devices. The method is particularly useful with devices where the minority-carrier diffusion length is comparable to the diameter of the electron beam interaction volume. A gaussian beam profile is convoluted with a theoretical model for electron-beam-induced current and the results used to determine the minority-carrier diffusion length from measured data. The surface recombination velocity is estimated from the dependence of the measured minority-carrier diffusion length on the electron beam accelerating voltage. The technique is applied to a photovoltaic infrared sensor device made in mercury-cadmium-telluride.
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