Abstract
This paper discusses optimum design strategies for high-efficiency hybrid semiconductor optical amplifiers (SOA). A comprehensive model is presented to determine the width, composition, and number of quantum wells for a hydrophobic bonded SOA with In s-x-y)Ga (x)Al (y) As quantum-wells (QW). Optimizing the interfacial bonding layer, III-V wafer stack design, straight hybrid amplifier dimensions and flared amplifier configurations leads to a design for up to 35% wall-plug efficiency at 2 mW input and 10 dB gain. Likewise, optimized dimensions also lead to 15% wall-plug efficiency (WPE) at 0.1 mW input and 10 dB gain. Thermal effects due to the effect of the buried oxide layer (BOX) is presented and methods of improved thermal extraction is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
