Abstract
Objective of this paper is verification of newly developed formula of charge storage in capacitor as q = c*v, in RC circuit, to get validation for ideal loss less capacitor as well as fractional order capacitors for charging and discharging cases. This new formula is different to usual and conventional way of writing capacitance multiplied by voltage to get charge stored in a capacitor i.e. q = cv. We use this new formulation i.e. q = c*v in RC circuits to verify the results that are obtained via classical circuit theory, for a case of classical loss less capacitor as well as fractional capacitor. The use of this formulation is suited for super-capacitors, as they show fractional order in their behavior. This new formula is used to get the ‘memory effect’ that is observed in self-discharging phenomena of super-capacitors-that memorizes its history of charging profile. Special emphasis is given to detailed derivational steps in order to clarity in usage of this new formula in the RC circuit examples. This paper validates the new formula of charge storage in capacitor i.e. q = c*v.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
