Abstract
In chemically amplified resists used for ionizing radiation such as extreme ultraviolet (EUV) radiation, secondary electrons play an important role in acid generation. In particular, the electron migration after thermalization is closely related to the resolution and acid generation efficiency of the resist. In this study, we investigated the effect of the material properties of the resist on the resolution blur and acid generation efficiency. By using a Monte Carlo simulation, the effects of the effective reaction radius of acid generators, the dielectric constant of the polymer, and the thermalization distance were clarified. For a given thermalization distance, there is a trade-off relationship between the resolution and acid generation efficiency of the resist. However, the thermalization distance should be reduced because its effect on the resolution is greater than that on the efficiency. For the effective reaction radius of the acid generators and the dielectric constant of the polymer, the relationship is not a trade-off one. These two parameters should be increased to improve resist performance in terms of resolution and acid yields.
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