Abstract
The trade-off between resolution, sensitivity, and line edge roughness (LER) is the most serious problem for the development of sub-30 nm resists based on chemical amplification. Because of this trade-off, the increase in acid generation efficiency is essentially required for high-resolution patterning with high sensitivity and low LER. In this study, we investigated the dependences of acid generation efficiency on the molecular structure and concentration of acid generators upon exposure to extreme ultraviolet (EUV) radiation. The acid generation efficiency (the number of acid molecules generated by a single EUV photon) was obtained within the acid generator concentration range of 0–30 wt % for five types of ionic and nonionic acid generators.
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