Theoretical study on optimization criterion of the triple RESURF lateral power devices via virtual junction concept

Abstract

The triple reduced surface field (T-RESURF) technique allows the drift region to achieve a much higher doping concentration while maintaining its breakdown voltage unaffected. Yet, as a result of the missing design guidance, the optimization of the T-RESURF effect is difficult to be realized in practice. In light of that, in this paper, the Virtual Junction Concept is proposed to provide the optimization criterion and explore physical insight of the T-RESURF effect. The proposed method bypasses the complicated 2D analysis by equivalenting the 2D drift region to a 1D virtual junction. The effectiveness and correctness of such a method are validated by the good agreement between modeled and simulated results. Benefit from its simplicity and veracity, the proposed method can not only conduct qualitative and quantitative analysis on the T-RESURF effect but also capable of providing design guidance and optimization criterion.