Abstract
We perform a theoretical study for the measurement of short-pulse high-intensity x-ray sources through the x-ray emission processes from multi-inner-shell excited states (1s22s22pk3s23p2, k = 1–4) and hollow atoms (1s22s23s23p2) of Si. We discuss the effect of weak-intensity long-pulse x-rays mixed with high-intensity short-pulse x-rays and the ratio of the x-ray emission from multi-inner-shell excited states with that from hollow atoms.
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