Abstract
The susceptibility and effective mass of electrons and hole vary as functions of carrier density and temperature in parabolic lateral barrier quantum-well wires (QWWRs). To investigate these properties, we utilize the leading-order dynamically screened Coulomb interaction, wherein the electron self-energy is calculated within the plasmon-pole approximation (PPA). All findings for GaAs QWWRs reveal a substantial difference between susceptibility and effective mass at low and high temperatures for varying carrier densities. These results contribute to illuminate of how Coulomb interactions and exchange–correlation energies influence the susceptibility and effective mass of GaAs semiconductors across a broad range of temperature and carrier density conditions.
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