Abstract
In this study, we investigated the simulation impact of carrier density and temperature on properties such as susceptibility and effective mass of electrons in GaAs/Al x Ga1−x As quantum-well wires, involving the treatment of Coulomb interaction and the interaction between electrons and holes with longitudinal optical phonons (LO-phonon) on an equal basis. The susceptibility and effective mass were calculated and compared with the results when no phonon coupling was considered. Furthermore, the key findings were compared with results from the sum-rule version of the Singwi-Tosi-Land-Sj ö lander (STLS) theory, mean-spherical approximation (MSA) theory, and there is a high level of concordance between this formula and experimental values obtained by other researchers. Our results reveal that carrier concentration and temperature significantly affect susceptibility and effective mass of the quantum well-wires in both cases, with LO-phonon contributions. These results contribute to illuminating how Coulomb interactions and exchange-correlation energies influence the susceptibility and effective mass of GaAs/Al x Ga1−x As across a broad range of temperature and carrier density conditions.
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