Abstract
A summary of theoretical investigations of short pulse (τL ≤ 1 ps) laser interaction with dielectrics, semiconductors and semiconductor heterostructures is presented. The time-dependent kinetic Fokker-Planck type equation for excited conduction electrons is used to describe this interaction in SiO2 and is systematically derived for GaAs. The energy spectra of the electron distribution function and the time dependence of the electron density are presented to illustrate the role of the different physical processes responsible for the conduction electron dynamics. Some possible types of laser induced damage in dielectrics and semiconductors including optical, electrical and structural damage are explored. In addition, the photon-absorption-induced intrasubband and intersubband phonon scattering of conduction electrons in GaAs/AlGaAs quantum wells are predicted by using the Boltzmann equation in the presence of a normally incident mid-IR pulsed laser field.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call