Abstract
This work investigated the modulation responses of Fabry–Perot Ge-on-Si lasers by modeling and simulations. The 3 dB bandwidth dependence on the structure parameters such as poly-Si cladding thickness, Ge cavity width and thickness, and minority carrier lifetime were studied. A 3 dB bandwidth of 33.94 GHz at a biasing current of 270.5 mA is predicted after Ge laser structure optimization with a defect limited carrier lifetime of 1 ns. The eye diagrams simulated show a stable eye-opening window at 20 Gb·s−1 NRZ. The improvement to 10 ns minority carrier lifetime would reduce the threshold current to 6.85 mA, and increase the 3 dB bandwidth to 36.89 GHz.
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