Abstract
A theoretical study of the radiation effects, from the point of view of the non-ionising energy loss and of the concentration of primary defects, in some A 3B 5 semiconductors, has been performed. These effects have been analysed for charged pions, in the energy range 50 MeV–50 GeV. The investigated materials have been GaAs, InP, GaP, InAs and InSb, and the results have been compared with silicon, as a reference material, keeping into account the peculiarities of the pion–nucleus interaction, and the recoil energy redistribution in the lattice. The results of the calculations have put in evidence the higher radiation resistance of Si, GaP and GaAs in the whole energy range investigated, with respect to the other analysed materials: InP, InAs and InSb, that proved to be of interest from this point of view only in the intermediate energy region.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
