Theoretical study of N-face InGaN light-emitting diodes with GaN–InGaN–GaN barrier near p-side and n-side

Abstract

The GaN–InGaN–GaN barrier has been designed to replace the conventional GaN barriers near p-GaN and n-GaN side for N-face InGaN/GaN multiple quantum well light-emitting diodes (LEDs). The advantages of the N-face LED with GaN–InGaN–GaN barrier near n-GaN are numerically studied. The EL spectra, power–voltage performance curves, electron concentration, energy band diagrams and radiative recombination rate in the active region are systematically investigated. The simulated results show that the N-face LED with GaN–InGaN–GaN barrier near n-GaN has better performance over its conventional N-face LED and counterpart with GaN–InGaN–GaN barrier near p-GaN due to the appropriately modified energy band diagrams which are favorable for the injection of electrons and enhanced radiative recombination rate in the quantum wells.