Abstract
InGaN light-emitting diodes (LEDs) with InGaN–GaN quantum barriers of gradually decreasing indium concentration along the growth direction are proposed to be used. In the proposed structure, simulation results show that the holes are widely distributed in the active region due to the larger hole injection/transportation efficiency by reducing the effective potential height for holes and the radiative recombination rate is efficiently improved, which leads to the significant enhancement of light-output power and internal quantum efficiency (IQE) over the conventional LED with GaN barriers. Moreover, the optical performance is further improved when the graded InGaN/GaN supperlattice (SL) is introduced between the multiple quantum wells (MQWs) and p-AlGaN electron blocking layer (EBL) in our designed LED structure, permitting more freedom for the optimization.
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