Abstract
We study the properties of highly strained InAs material calculated from first-principles modelling using ABINIT packages. We first simulate the characteristics of bulk InAs crystals and compare them with both experimental and density functional theory results. Secondly, we focus our attention on the strain effects on InAs crystals with a gradual strain reaching progressively the lattice matched parameters of InP, GaAs and GaP substrates. Section 4 is dedicated to the study of a hypothetical spherical InAs/GaP quantum dot (QD). The effect of hydrostatic deformations for both InAs zinc-blende phase and InAs rocksalt phase is discussed. Section 5 is devoted to the dependence of the lattice parameter aoz versus aox (aoy), Γ gap energies and band line-ups at the Γ point for biaxial deformations and interfacial structures. Ab initio results are compared with the empirical calculations which reveal nonlinear behaviour of the conduction band for highly strained InAs material.
Submitted Version (
Free)
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
