Abstract

Field-free switching in perpendicular magnetic tunnel junctions (P-MTJs) can be achieved by combined injection of spin-transfer torque (STT) and spin-orbit torque (SOT) currents. In this paper, we derived the relationship between the STT and SOT critical current densities under combined injection. We included the damping–like torque (DLT) and field-like torque (FLT) components of both the STT and SOT. The results were derived when the ratio of the FLT to the DLT component of the SOT was positive. We observed that the relationship between the critical SOT and STT current densities depended on the damping constant and the magnitude of the FLT component of the STT and the SOT current. We also noted that, unlike the FLT component of SOT, the magnitude and sign of the FLT component of STT did not have a significant effect on the STT and SOT current densities required for switching. The derived results agreed well with micromagnetic simulations. The results of this work can serve as a guideline to model and develop spintronic devices using a combined injection of STT and SOT currents.

Highlights

  • Electrical and Computer Engineering, King Abdullah University of Science and Technology, Citation: Wasef, S.; Fariborzi, H

  • We investigated the effects of combined injection of spin-orbit torque (SOT) ( JSOT ) and JSTT ) current in perpendicular magnetic tunnel junctions (P-magnetic tunnel junctions (MTJ)) with their with individual

  • We investigated the magnetic switching in MTJ devices under combined injection of Spin transfer torque (STT) and Spin orbit torque (SOT) currents

Read more

Summary

Introduction

Electrical and Computer Engineering, King Abdullah University of Science and Technology, Citation: Wasef, S.; Fariborzi, H. Field-free switching in perpendicular magnetic tunnel junctions (P-MTJs) can be achieved by combined injection of spin-transfer torque (STT) and spin-orbit torque (SOT) currents. We derived the relationship between the STT and SOT critical current densities under combined injection. In SOT (Figure 1b), the magnetization switching in the free layer takes place due to the surface (Rashba effect) and bulk interactions (spin hall effect) caused by the attached heavy metal layer [4,5,6]. The FLT component can affect the critical current required for switching in both STT and SOT devices [11,12]. Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations

Methods
Results
Conclusion
Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call