Abstract
We focus on transport of electron spins for which spin currents can be controlled and manipulated via the electron energy and momentum. In our work we analyze the properties of the hole gas formed in Ga ( 1 - x ) Mn x As/GaAs/ Ga ( 1 - x ) Mn x As heterostructure: the electronic structures, polarization and coupling energy E C are obtained using an efficient self-consistent procedure to solve simultaneously the Schrodinger and Poisson equations tacking account the interaction with Mn magnetic moments and for different parameters of the magnetic Ga ( 1 - x ) Mn x As layer and the nonmagnetic GaAs spacer.
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