Abstract
The shift of band edges in porous silicon is studied by simulation based on tight-binding band calculations for model structures mimicking porous silicon. The results are compared with recent measurements of band edge shifts, and the greater shift of the valence band edge compared to the conduction band edge in porous silicon is theoretically confirmed. It is found that the ratio of band edge shifts is related to the positions of the center of the electronic density of states for the first conduction and valence bands in bulk silicon.
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