Abstract
In this study, the properties of light propagation for a GaN semiconductor when subjected to a periodic external magnetic field were calculated by means of a transfer matrix. The dielectric function which was modulated periodically by the periodic external magnetic field caused changes of photonic band gap (PBG). In the reflection spectra, photons can be localized in the narrow bands. The position and intensity of PBGs can be modulated by changing the periodic external magnetic field and angle of the incident electromagnetic wave. All of these results have shown that a semiconductor has functions similar to conventional photonic crystals subjected to periodic external magnetic field.
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